A comparison of formulations and non-linear solvers for computational modelling of semiconductor devices
Author (s): Pérez-Escudero, S.; Codony, D.; Arias, I.; Fernández-Méndez, S.Journal: Computational Mechanics
Date: 2024
Abstract:
The drift-diffusion formulation, modelling semiconductor materials in terms of carrier densities and electric potential, is considered together with an alternative formulation in terms of dimensionless logarithmic quantities. Stability of both formulations in presence of sharp variations with a Galerkin Finite Element discretisation is assessed in two realistic problems: a p-n junction and an n-MOSFET device. The robustness with respect to the initial guess and the computational efficiency of the Newton-Raphson and Gummel non-linear solvers are also compared.
Bibtex:
@article{PerezEscudero24,
Author = {P{\'e}rez-Escudero, Sergi and Codony, David and Arias, Irene and Fern{\'a}ndez-M{\'e}ndez, Sonia},
Doi = {10.1007/s00466-024-02578-x},
Journal = {Computational Mechanics},
Title = {A comparison of formulations and non-linear solvers for computational modelling of semiconductor devices},
Year = {2024}}